Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· High-Side DC/DC Conversion· Notebook· SeverPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20...
TSM4936D: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· High-Side DC/DC Conversion· Notebook· SeverPinoutSpecifications Parameter Sy...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Limit |
Unit | ||
Drain-Source Voltage |
VDS |
30 |
V | ||
Gate-Source Voltage |
VGS |
±20 |
V | ||
Continuous Drain Currente |
ID |
5.9 |
A | ||
Pulsed Drain Currenta |
IDM |
40 |
A | ||
Continuous Source Current (Diode Conduction)a,b |
IS |
1.0 |
A | ||
Maximum Power Dissipation | Ta=25 |
PD |
3.0 |
W | |
Ta=75 |
2.1 | ||||
Operating Junction Temperature |
TJ |
+150 |
|||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
-50 to +150 |