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TSM4925D

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switches Notebook PCs Desktop PCsSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Contin...

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SeekIC No. : 004529688 Detail

TSM4925D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switches Notebook PCs Desktop PCsSpecifications Parameter Symbol Limit ...

TSM4925D Data Sheet

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Part Number:
TSM4925D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Application

Load Switches
Notebook PCs
Desktop PCs


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current.
ID
-7.1
A
Pulsed Drain Current
IDM
-40
A
Continuous Source Current (Diode Conduction)a,b
IS
-1.7
A
Maximum Power Dissipation Ta = 25
PD
2.0
W
Ta = 75
1.3
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RJC
3
/W
Junction to Case Thermal Resistance
RJA
50
/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 10 sec.


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