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TSM4886

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication DC-DC Conversion Battery SwitchSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS 20 V Continu...

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SeekIC No. : 004529687 Detail

TSM4886: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication DC-DC Conversion Battery SwitchSpecifications Parameter Symbol Limit Un...

TSM4886 Data Sheet

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Part Number:
TSM4886
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Application

DC-DC Conversion
Battery Switch


Specifications

Parameter
Symbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
20
V
Continuous Drain Current
ID
13
A
Pulsed Drain Current
IDM
50
A
Continuous Source Current (Diode Conduction)a,b
IS
2.6
A

Maximum Power Dissipation

Ta=25
PD
2.95
W
Ta=75
1.9
Operating Junction Temperature
TJ
+150
Operating Junction and S torage
Temperature R ange
TJ, TS TG
-55 to 150
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 10 sec.


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