Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication DC-DC Conversion Battery SwitchSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drai...
TSM4872: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication DC-DC Conversion Battery SwitchSpecifications Parameter Symbol Limit Unit ...
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Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
30 |
V | |
Gate-Source Voltage |
VGS |
20 |
V | |
Continuous Drain Current |
ID |
15 |
A | |
Pulsed Drain Current |
IDM |
50 |
A | |
Continuous Source Current (Diode Conduction)a,b |
IS |
2.6 |
||
Maximum Power Dissipation | Ta = 25 |
PD |
3.10 |
W |
Ta = 75 |
2 | |||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |