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TSM4835

Features: · Advanced trench process technology· High density cell design for ultra low on-resistance·High gate voltagePinoutSpecifications Parameter Symbol Limit Unit Drain - source voltage VDS -30 V Gate - source voltage VGS ±25 V Continuous Drain Curre...

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TSM4835: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance·High gate voltagePinoutSpecifications Parameter Symbol Limit Unit Drain - sour...

TSM4835 Data Sheet

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Part Number:
TSM4835
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 · Advanced trench process technology
 · High density cell design for ultra low on-resistance
 · High gate voltage


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limit
Unit
Drain - source voltage
VDS
-30
V
Gate - source voltage
VGS
±25
V
Continuous Drain Current, VGS @4.5V.
ID
-9.5
A
Pulsed Drain Current, VGS @4.5V
IDM
-50
A
Maximum Power Dissipation
 Ta = 25
PD
2.5
W
Ta > 25
1.6
W
Operating Junction Temperature
TJ
+150
Storage temperature
TJ,Tstg
55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Ambient Thermal Resistance (PCB mounted)
Rja
50
/W
Note: Surface mounted on FR4 board t<=5sec.


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