TSM4435 Selling Leads, Price trend, TSM4435 DataSheet download, circuit diagram from SeekIC.com

Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· DC-DC Conversion· Battery SwitchPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ...

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SeekIC No. : 004529684 Detail

TSM4435: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· DC-DC Conversion· Battery SwitchPinoutSpecifications Parameter Symbol Rat...

TSM4435 Data Sheet

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Part Number:: TSM4435
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Month Sales

268 Transactions

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Upload time: 2025/1/11

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Recent History
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Product Details

Description

Features:

· Advance Trench Process Technology
· High Density Cell Design for Ultra Low On-resistance

Application

· DC-DC Conversion
· Battery Switch

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Ratings	Unit
Drain-Source Voltage		V_DS	-30	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current		I_D	-9.1	A
Pulsed Drain Current		I_DM	-50	A
Continuous Source Current (Diode Conduction)^a,b		I_S	-2.1	A
Maximum Power Dissipation	T_a = 25	P_D	2.5	W
Maximum Power Dissipation	T_a = 70	P_D	1.6	W
Operating Junction Temperature		T_J	+150
Operating Junction and Storage Temperature Range		T_J, T_STG	- 55 to +150

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TSM4435

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