TSM4420

Features: · Advanced trench process technology· High Density Cell Design for Ultra Low On-Resistance· Fully Characterized Avalanche Voltage and CurrentSpecifications Parameter Symbol Rating Unit Drain-Source VoltageGate-Source Voltage VDSVGS 25±20 VV Contin...

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SeekIC No. : 004529680 Detail

TSM4420: Features: · Advanced trench process technology· High Density Cell Design for Ultra Low On-Resistance· Fully Characterized Avalanche Voltage and CurrentSpecifications Par...

floor Price/Ceiling Price

Part Number:
TSM4420
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Advanced trench process technology
· High Density Cell Design for Ultra Low On-Resistance
· Fully Characterized Avalanche Voltage and Current



Specifications

Parameter Symbol Rating Unit
Drain-Source Voltage

Gate-Source Voltage
VDS

VGS
25

±20
V

V
Continuous Drain Current ID 13.5 A
Pulsed Drain Current IDM 50
Total Power Dissipation TA = 25

TA = 70
PD 2

1.3
W
Operating Junction Temperature Tch +150
Operating Junction and Storage Temperature Range TJ,TSTG -65 to +150



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