Features: · Advanced trench process technology· High Density Cell Design for Ultra Low On-Resistance· Fully Characterized Avalanche Voltage and CurrentSpecifications Parameter Symbol Rating Unit Drain-Source VoltageGate-Source Voltage VDSVGS 25±20 VV Contin...
TSM4420: Features: · Advanced trench process technology· High Density Cell Design for Ultra Low On-Resistance· Fully Characterized Avalanche Voltage and CurrentSpecifications Par...
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Parameter | Symbol | Rating | Unit | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
25 ±20 |
V V | |
Continuous Drain Current | ID | 13.5 | A | |
Pulsed Drain Current | IDM | 50 | ||
Total Power Dissipation | TA = 25 TA = 70 |
PD | 2 1.3 |
W |
Operating Junction Temperature | Tch | +150 | ||
Operating Junction and Storage Temperature Range | TJ,TSTG | -65 to +150 |