TSM4416

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PWM ApplicationSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Cu...

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SeekIC No. : 004529678 Detail

TSM4416: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PWM ApplicationSpecifications Parameter Symbol Limit Unit Dr...

floor Price/Ceiling Price

Part Number:
TSM4416
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance



Application

Load Switch
PWM Application



Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current
ID
8.5
A
Pulsed Drain Current
IDM
40
A
Continuous Source Current (Diode Conduction)a,b
IS
2.6
A
Maximum Power Dissipation Ta = 25
PD
2.5
W
Ta = 75
1.6
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 10 sec.



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