Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain to Source Voltage VDS -30 V Gate to Source Voltage VGS ±25 V Continuous Drain Current, VGS @4....
TSM4415: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain to Sourc...
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Parameter | Symbol | Limit | Unit | |
Drain to Source Voltage | VDS | -30 | V | |
Gate to Source Voltage | VGS | ±25 | V | |
Continuous Drain Current, VGS @4.5V. | ID | -8 | A | |
Pulsed Drain Current, VGS @4.5V | IDM | -30 | A | |
Continuous Source Current (Diode Conduction) a,b | IS | -1 | W | |
Maximum Power Dissipation | Ta = 25 Ta = 70 |
PD | 3 2.1 |
W |
Channel Temperature | TJ | +150 | ||
Storage Temperature | TJ,Tstg | -55 to +150 |