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TSM4414

Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· High-Side DC/DC Conversion·Notebook·SeverSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ...

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SeekIC No. : 004529676 Detail

TSM4414: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· High-Side DC/DC Conversion·Notebook·SeverSpecifications Parameter Symbol ...

TSM4414 Data Sheet

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Part Number:
TSM4414
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Advance Trench Process Technology
· High Density Cell Design for Ultra Low On-resistance


Application

· High-Side DC/DC Conversion
·Notebook
·Sever


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
8.5
A
Pulsed Drain Current
IDM
40
A
Continuous Source Current (Diode Conduction)a,b
IS
1.0
A
Maximum Power Dissipation Ta=25
PD
3.0
W
TC=75
2.1
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
-55to +150

 




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