Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Fully characterized avalanche voltage and currentPinoutSpecifications Symbol Parameter Limit Units ...
TSM4410D: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Fully cha...
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Symbol | Parameter | Limit | Units | |
VDS | Drain-Source Voltage | 25 | V | |
VGS | Gate-Source Voltage | ±20 | V | |
ID | Continuous Drain Current | 10 | A | |
IDM | Pulsed Drain Current | 50 | A | |
PD | Maximum Power Dissipation | TA=25°C | 2.5 | W |
TA=70°C | 1.6 | W | ||
TJ | Operating Junction Temperature | +150 | ||
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to 150 |