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TSM4410

Features: · Advanced trench process technology· High Density Cell Design for Ultra Low On-Resistance· Fully Characterized Avalanche Voltage and CurrentSpecifications Parameter Symbol Max n-channel Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS...

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SeekIC No. : 004529674 Detail

TSM4410: Features: · Advanced trench process technology· High Density Cell Design for Ultra Low On-Resistance· Fully Characterized Avalanche Voltage and CurrentSpecifications Par...

TSM4410 Data Sheet

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Part Number:
TSM4410
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Advanced trench process technology
· High Density Cell Design for Ultra Low On-Resistance
· Fully Characterized Avalanche Voltage and Current


Specifications

Parameter Symbol Max n-channel Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 10
 A
Pulsed Drain Current IDM 50
Maximum Power Dissipation TA=25 PD 2 W
TA=100 1.3
Operating Junction Temperature TJ +150
Junction and Storage Temperature Range TJ, TSTG -55 to 150



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