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TSM3911D

Features: · Advance Trench Process Technology·High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch· PA SwitchSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Cu...

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SeekIC No. : 004529668 Detail

TSM3911D: Features: · Advance Trench Process Technology·High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch· PA SwitchSpecifications Parameter Symbol Limit Unit Dra...

TSM3911D Data Sheet

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Part Number:
TSM3911D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Advance Trench Process Technology
·High Density Cell Design for Ultra Low On-resistance


Application

· Load Switch
· PA Switch


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Currente
ID
-2.2
A
Pulsed Drain Currenta
IDM
-8
A
Continuous Source Current (Diode Conduction)a,b
IS
-0.72
A
Maximum Power Dissipation Ta=25
PD
1.15
W
Ta=70
0.73
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RJF
30
/W
Junction to Ambient Thermal Resistance (PCB mounted)
RJA
80
/W

Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 5 sec.




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