Features: Rugged and reliableHigh density cell design for ultra low on-resistanceExcellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30V V Gate-Source Voltage VGS ±...
TSM3400: Features: Rugged and reliableHigh density cell design for ultra low on-resistanceExcellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications Parameter S...
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Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
30V |
V | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current |
ID |
3.5 |
A | |
Pulsed Drain Current |
IDM |
13 |
A | |
Maximum Power Dissipation | Ta = 25 |
PD |
1.25 |
W |
Ta = 75 |
0.8 | |||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |