Features: · Rugged and reliable· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Compact and low profile SOT-23 packageSpecifications Symbol Parameter Limit Units VDS Drain-Source Voltage -30V...
TSM3401: Features: · Rugged and reliable· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Compact and low profile ...
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Symbol | Parameter | Limit | Units | |
VDS | Drain-Source Voltage | -30V | V | |
VGS | Gate-Source Voltage | ±20 | V | |
ID | Continuous Drain Current | -3 | A | |
IDM | Pulsed Drain Current | -10 | A | |
TJ | Operating Junction Temperature | +150 | mJ | |
PD | Maximum Power Dissipation | Ta = 25 | 1.25 |
W |
Ta = 75 | 0.8 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to 150 |