TSM3481 Selling Leads, Price trend, TSM3481 DataSheet download, circuit diagram from SeekIC.com

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication DC-DC Conversion Asynchronous Buck ConverterSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ...

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SeekIC No. : 004529665 Detail

TSM3481: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication DC-DC Conversion Asynchronous Buck ConverterSpecifications Parameter Symbol Li...

TSM3481 Data Sheet

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Part Number:: TSM3481
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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Features: Rugged and reliableHigh density cell design for ultra low on-resistanceExcellent thermal...
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US $.08 - .08 / Piece

MOSFET 30V N channel MOSFET

Product Details

Description

Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance

Application

DC-DC Conversion
Asynchronous Buck Converter

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	-30	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current		I_D	-5.3	A
Pulsed Drain Current		I_DM	-20	A
Continuous Source Current (Diode Conduction)^a,b		I_S	-1.7	A
Maximum Power Dissipation	T_a = 25	P_D	2.0	W
Maximum Power Dissipation	T_a = 75	P_D	1.3	W
Operating Junction Temperature		T_J	+150
Operating Junction and Storage Temperature Range		T_J, T_STG	- 55 to +150

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TSM3481

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