Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Specially designed for Li-ion battery packs.· Battery switch applicationSpecifications Parameter Symbol Limit Unit Drain-Source Vo...
TSM3461CX5: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Specially designed for Li-ion battery packs.· Bat...
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Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
20V |
V | |
Gate-Source Voltage |
VGS |
±12 |
V | |
Continuous Drain Current VGS @4.5V | Ta=25 |
ID |
6 |
A |
Ta=70 |
ID |
5 |
A | |
Pulsed Drain CurrentVGS @4.5V |
IDM |
30 |
A | |
Diode Forward Current |
Is |
1.5 |
A | |
Maximum Power Dissipation | Ta=25 |
PD |
57 |
W |
Ta=70 |
0.45 |
W/ | ||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
-50 to +150 |
||
Thermal Performance | ||||
Parameter |
Symbol |
Limit |
Unit | |
Junction to Foot (Drain) Thermal Resistance |
Rjf |
35 |
/W | |
Junction to Ambient Thermal Resistance (PCB mounted) |
Rja |
120 |
/W |