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TSM3446

Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch· PA SwitchSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain C...

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SeekIC No. : 004529660 Detail

TSM3446: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch· PA SwitchSpecifications Parameter Symbol Limit Unit Dr...

TSM3446 Data Sheet

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Part Number:
TSM3446
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Advance Trench Process Technology
· High Density Cell Design for Ultra Low On-resistance


Application

· Load Switch
· PA Switch


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, VGS @4.5V.
ID
5.3
A
Pulsed Drain Current, VGS @4.5V
IDM
20
A
Continuous Source Current (Diode Conduction)a,b
IS
0.72
A
Maximum Power Dissipation Ta=25
PD
2.0
W
Ta=70
1.3
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
-50 to +150





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