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TSM3443

Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Fully Characterized Avalanche Voltage and Current· Improved Shoot-Through FOMSpecifications Parameter Symbol Maximum Units Drain-Source Voltage VDS -20...

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TSM3443: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Fully Characterized Avalanche Voltage and Current· Improved Shoo...

TSM3443 Data Sheet

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Part Number:
TSM3443
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced trench process technology
· High density cell design for ultra low on-resistance
· Fully Characterized Avalanche Voltage and Current
· Improved Shoot-Through FOM


Specifications

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20V V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID -4.7 A
Pulsed Drain Current IDM -20 A
Power Dissipation B Ta =25°C PD 2 W
Ta = 70 °C 1.3 W/°C
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Operating Junction and Storage Temperature Range TJ +150 °C



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