TSM3442CX6

MOSFET 20V N channel MOSFET

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SeekIC No. : 00155403 Detail

TSM3442CX6: MOSFET 20V N channel MOSFET

floor Price/Ceiling Price

US $ .08~.08 / Piece | Get Latest Price
Part Number:
TSM3442CX6
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~15000
  • Unit Price
  • $.08
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Packaging : Reel    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Description

The TSM3442CX6 is one of the TSM3442 series.The TSM3442CX6 is a 20V N-Channel Enhancement Mode MOSFET.

Features of the TSM3442CX6 are:(1)Advanced trench process technology;(2)High density cell design for ultra low on-resistance;(3)N-Channel 2.5V (G-S) MOSFET;(4)Excellent thermal and electrical capabilities;(5)Compact and low profile SOT-23 package.

The absolute maximum ratings of the TSM3442CX6 can be summarized as:(1)Drain-Source Voltage:20V;(2)Gate-Source Voltage:± 8 V;(3)Continuous Drain Current:3.6 A;(4)Pulsed Drain Current:10 A;(5)Maximum Power Dissipation ,Ta = 25 :1.5W;Maximum Power Dissipation,Ta = 75 :1.0W;(6)Operating Junction Temperature:+150 ;(7)Operating Junction and Storage Temperature Range:- 55 to +150 .

The electrical characteristics at TA=25   (unless otherwise noted) of the TSM3442CX6 can be summarized as:(1)Drain-Source Breakdown Voltage:20V;(2)Drain-Source On-State Resistance:60m;(3)Drain-Source On-State Resistance:90m;(4)Gate Threshold Voltage:0.45V;(5)Zero Gate Voltage Drain Current:1.0 uA;(6)Gate Body Leakage:± 100 nA;(7)On-State Drain Current:6A;(8)Forward Transconductance:10S.




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