TSM3442 Selling Leads, Price trend, TSM3442 DataSheet download, circuit diagram from SeekIC.com

Features: 􀂗· Advanced trench process technology􀂗· High density cell design for ultra low on-resistance􀂗· N-Channel 2.5V (G-S) MOSFET􀂗· Excellent thermal and electrical capabilitiesSpecifications Symbol Parameter Limit Units VDS Drain-Source Voltage ...

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SeekIC No. : 004529658 Detail

TSM3442: Features: 􀂗· Advanced trench process technology􀂗· High density cell design for ultra low on-resistance􀂗· N-Channel 2.5V (G-S) MOSFET􀂗· Excellent thermal and elect...

TSM3442 Data Sheet

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Part Number:: TSM3442
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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US $.08 - .08 / Piece

MOSFET 30V N channel MOSFET

Product Details

Description

Features:

􀂗· Advanced trench process technology
􀂗· High density cell design for ultra low on-resistance
􀂗· N-Channel 2.5V (G-S) MOSFET
􀂗· Excellent thermal and electrical capabilities

Specifications

Symbol	Parameter		Limit	Units
V_DS	Drain-Source Voltage		20V	V
V_GS	Gate-Source Voltage		±8	V
I_D	Continuous Drain Current		3.6	A
I_DM	Pulsed Drain Current		10	A
T_J	Operating Junction Temperature		+150	°C
P_D	Maximum Power Dissipation	Ta = 25 °C	1.5	W
P_D	Maximum Power Dissipation	Ta = 75°C	1.0	W
T_J, T_STG	Operating Junction and Storage Temperature Range		-55 to 150	°C

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TSM3442

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