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TSM3441

Features: ·Advanced trench process technology·High density cell design for ultra low on-resistance·Fully Characterized Avalanche Voltage and Current·Improved Shoot-Through FOMSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20V V Gate-Source V...

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SeekIC No. : 004529657 Detail

TSM3441: Features: ·Advanced trench process technology·High density cell design for ultra low on-resistance·Fully Characterized Avalanche Voltage and Current·Improved Shoot-Through FOMSpecifications P...

TSM3441 Data Sheet

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Part Number:
TSM3441
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Advanced trench process technology
·High density cell design for ultra low on-resistance
·Fully Characterized Avalanche Voltage and Current
·Improved Shoot-Through FOM


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20V
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-3
A
Pulsed Drain Current
IDM
-10
A
Maximum Power Dissipation
Ta = 25
PD
2
W
Ta = 70
1.3
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
Rjf
30
/W
Junction to Ambient Thermal Resistance (PCB mounted)
Rja
60
/W
Note: Surface mounted on FR4 board t<=10sec.


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