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TSM3433

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Curre...

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SeekIC No. : 004529656 Detail

TSM3433: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain-...

TSM3433 Data Sheet

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Part Number:
TSM3433
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Application

Load Switch
PA Switch


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-2.6
A
Pulsed Drain Current
IDM
-20
A
Continuous Source Current (Diode Conduction)a,b
IS
-1.7
A
Maximum Power Dissipation Ta = 25
PD
2.0
W
Ta = 70
1.0
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ,TSTG
- 55 to +150
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. Pulse width limited by maximum junction temperature


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