TSM2N7002EDCU6

The TSM2N7002EDCU6 is a kind of 50V Dual N-Channel Enhancement Mode MOSFET. There are some features as follows: (1)Dual N-channel in package.; (2)Advanced trench process technology; (3)High density cell design for ultra low on-resistance; (4)High input impedance; (5)High speed switching; (6)No minority carrier storage time; (7)CMOS logic compatible input; (8)No secondary breakdown; (9)Compact and low profile SOT-363 package.

Then is about the absolute maximum ratings of TSM2N7002EDCU6: (1)Drain-Source Voltage, VDS: 50 V; (2)Gate-Source Voltage, VGS: ± 20 V; (3)Continuous Drain Current, ID: 250 mA; (4)Pulsed Drain Current, IDM: 1.0 A; (5)Maximum Power Dissipation, PD: 200 mW at Ta= 25;  150 mW at Ta = 75 ; (6)Operating Junction Temperature, TJ: +150; (7)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150.

What comes next is about the electrical characteristics of TSM2N7002EDCU6 : (1)Drain-Source Breakdown Voltage at VGS = 0V, ID = 10uA, BVDSS: 50 V min; (2)Drain-Source On-State Resistance at VGS = 10V, ID = 250mA, RDS(ON): 3 max; (3)Drain-Source On-State Resistance at VGS = 5V, ID = 50mA, RDS(ON): 4 max; (4)Gate Threshold Voltage at VDS = VGS, ID = 250uA, VGS(TH): 1.0 V min,  2.0 V typ and 2.5 V max; (5)Zero Gate Voltage Drain Current at VDS = 50V, VGS = 0V, IDSS: 1.0 uA max; (6)Gate Body Leakage at VGS = ± 20V, VDS = 0V, IGSS: ± 100 nA max; (7)On-State Drain Current at VDS 7V, VGS = 10V, ID(ON): 500 mA min; (8)Forward Transconductance at VDS = 7V, ID = 200mA, gfs: 80 mS min.