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TSM2N7002E

Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· High input impedance􀂗 Advanced trench process technology· High density cell design for ultra low on-resistance· High input impedance· High speed switching· High speed switching· No minori...

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TSM2N7002E: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· High input impedance􀂗 Advanced trench process technology· High density cell design for ...

TSM2N7002E Data Sheet

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Part Number:
TSM2N7002E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Advanced trench process technology
· High density cell design for ultra low on-resistance
· High input impedance􀂗 Advanced trench process technology
· High density cell design for ultra low on-resistance
· High input impedance
· High speed switching
· High speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No secondary breakdown
· Compact and low profile SOT-363 package


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
ID
250
mA
Pulsed Drain Current
IDM
1.0
A
Maximum Power Dissipation Ta = 25
PD
200
mW
  Ta = 75
150
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Lead Temperature (1/8" from case)
TL
5
S
Junction to Ambient Thermal Resistance (PCB mounted)
Rja
625
/W
Note: Surface mounted on FR4 board t<=5sec.


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