TSM2N7002 Selling Leads, Price trend, TSM2N7002 DataSheet download, circuit diagram from SeekIC.com

Features: · Advanced trench process technology· High density cell design for low on-resistance· High input impedance· High speed switching· No minority carrier storage time· CMOS logic compatible input· No secondary breakdown· Compact and low profile SOT-23 packageSpecifications Parameter ...

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SeekIC No. : 004529650 Detail

TSM2N7002: Features: · Advanced trench process technology· High density cell design for low on-resistance· High input impedance· High speed switching· No minority carrier storage time· CMOS logic compatible in...

TSM2N7002 Data Sheet

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Part Number:: TSM2N7002
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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Product Details

Description

Features:

· Advanced trench process technology
· High density cell design for low on-resistance
· High input impedance
· High speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No secondary breakdown
· Compact and low profile SOT-23 package

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	50	V
Gate-Source Voltage		V_GS	± 20	V
Continuous Drain Current		I_D	115	mA
Pulsed Drain Current		I_DM	800	A
Maximum Power Dissipation	Ta = 25	P_D	225	mW
	Ta = 25		1.8	MW/
Operating Junction Temperature		T_J	+150
Operating Junction and Storage Temperature Range		T_J, T_STG	- 55 to +150
Thermal Performance
Lead Temperature (1/8" from case)		T_L	5	S
Junction to Ambient Thermal Resistance (PCB mounted)		R_ja	417	/W

Note: Surface mounted on FR4 board t<=5sec.

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TSM2N7002

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