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TSM2N7000

Features: · High density cell design for low on-resistance· Voltage control small signal switch· Rugged and reliable· High saturation current capability· Provide in TO-92 packageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage...

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SeekIC No. : 004529649 Detail

TSM2N7000: Features: · High density cell design for low on-resistance· Voltage control small signal switch· Rugged and reliable· High saturation current capability· Provide in TO-92 packageSpecifications ...

TSM2N7000 Data Sheet

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Part Number:
TSM2N7000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High density cell design for low on-resistance
· Voltage control small signal switch
· Rugged and reliable
· High saturation current capability
· Provide in TO-92 package


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Drain-Gate Voltage VDGR 60 V
Gate-Source Voltage--- Continuous
VGS
± 20
V
--- Pulsed VGSM ± 40
Continuous Drain Current
ID
200
mA
Pulsed Drain Current
IDM
500
mA
Maximum Power Dissipation Ta = 25
PD
350
mW
Ta = 25
2.8
mW/
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Lead Temperature (1/8" from case)
TL
10
S
Junction to Ambient Thermal Resistance (PCB mounted)
Rja
357
/W



Description

The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. The TSM2N7000 is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications.




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