Features: ·Robust high voltage termination·Avalanche energy specified·Diode is characterized for use in bridge circuits·Source to Drain diode recovery time comparable to a discrete fast recovery diode.·IDSS and VDS(on) specified at elevated temperatureSpecifications Parameter Symbolz ...
TSM2N60: Features: ·Robust high voltage termination·Avalanche energy specified·Diode is characterized for use in bridge circuits·Source to Drain diode recovery time comparable to a discrete fast recovery dio...
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Parameter |
Symbolz |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
600V |
V | |
Gate-Source Voltage |
VGS |
± 30 |
V | |
Continuous Drain Current |
ID |
2 |
A | |
Pulsed Drain Current |
IDM |
9 |
A | |
Maximum Power Dissipation |
Ta = 25
|
PD |
50 |
W |
Ta > 25
|
0.4 |
W/ | ||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |
||
Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25) |
EAS |
20 |
mJ |
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, the TSM2N60 is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.