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TSM2832

Features: · Advanced trench process technology· High density cell design for ultra low on-resistance·Excellent thermal and electrical capabilities·2.5V operating voltageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20V V Gate-Source Voltage ...

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SeekIC No. : 004529647 Detail

TSM2832: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance·Excellent thermal and electrical capabilities·2.5V operating voltageSpecifications Paramet...

TSM2832 Data Sheet

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Part Number:
TSM2832
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced trench process technology
· High density cell design for ultra low on-resistance
· Excellent thermal and electrical capabilities
·2.5V operating voltage


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 20V
V
Gate-Source Voltage
VGS
± 8
V
Continuous Drain Current
ID
3.6
A
Pulsed Drain Current
IDM
10
A
Maximum Power Dissipation Ta = 25 oC
PD
1.5
W
Ta = 75 oC
1.0
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8" from case)
TL
5
S
Junction to Ambient Thermal Resistance (PCB mounted)
Rja
65
/W
Note: Surface mounted on FR4 board t<=5sec.


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