Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch· Dc-DC Converters and Motors DriversPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS...
TSM25N03: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch· Dc-DC Converters and Motors DriversPinoutSpecifications Parameter ...
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Parameter |
Symbol |
Ratings |
Unit | |
Drain-Source Voltage |
VDS |
25 |
V | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current,VGS@ 4.5V |
ID |
25 |
A | |
Pulsed Drain Current,VGS@ 4.5V |
IDM |
100 |
A | |
Continuous Source Current (Diode Conduction)a,b |
IS |
20 |
A | |
Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25) |
EAS |
45 |
mJ | |
Maximum Power Dissipation | Ta = 25 |
PD |
60 |
W |
Ta = 70 |
13 | |||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |