Features: Advanced trench process technology High density cell design for ultra low on-resistanceExcellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Vol...
TSM2320: Features: Advanced trench process technology High density cell design for ultra low on-resistanceExcellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
20V |
V | |
Gate-Source Voltage |
VGS |
±10 |
V | |
Continuous Drain Current |
ID |
3.6 |
A | |
Pulsed Drain Current |
IDM |
14 |
A | |
Maximum Power Dissipation | Ta = 25 oC |
PD |
1.25 |
W |
Ta = 75 oC |
0.8 | |||
Operating Junction Temperature |
TJ |
+150 |
oC | |
Operating Junction and Storage Temperature Range |
TJ, TSTG |
-55 to +150 |
oC |