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TSM2311

Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Compact and low profile SOT-23 packageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20V V Gate...

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SeekIC No. : 004529640 Detail

TSM2311: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Compact and low profile SOT-23 packageSpecificati...

TSM2311 Data Sheet

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Part Number:
TSM2311
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 · Advanced trench process technology
 · High density cell design for ultra low on-resistance
 · Excellent thermal and electrical capabilities
 · Compact and low profile SOT-23 package


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 20V
V
Gate-Source Voltage
VGS
± 8
V
Continuous Drain Current
ID
- 4
A
Pulsed Drain Current
IDM
- 20
A
Maximum Power Dissipation Ta = 25 oC
PD
1.25
W
Ta = 75 oC
0.8
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8" from case)
TL
5
S
Junction to Ambient Thermal Resistance (PCB mounted)
Rja
100
/W
Note: Surface mounted on FR4 board t<=5sec.


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