Features: ·Advanced trench process technology·High density cell design for ultra low on-resistance·Excellent thermal and electrical capabilities·Compact and low profile SOT-23 packageSpecifications Item Symbol Rating Unit Drain-Source-Voltage VDS 20V V Drain-Gate-V...
TSM2302: Features: ·Advanced trench process technology·High density cell design for ultra low on-resistance·Excellent thermal and electrical capabilities·Compact and low profile SOT-23 packageSpecifications ...
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Item |
Symbol |
Rating |
Unit | |
Drain-Source-Voltage |
VDS |
20V |
V | |
Drain-Gate-Voltage |
VGS |
± 8 |
V | |
Continous Drain Current |
ID |
2.4 |
A | |
Pulsed Drain Current |
IDM |
10 |
A | |
Maximum Power Dissipation | Ta = 25 °C |
PD |
1.25 |
W |
Ta = 25 °C |
0.8 | |||
Operating Junction Temperature |
TJ |
150 |
°C | |
Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55to+150 |
°C |