Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch·PA SwitchPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Dr...
TSM2301B: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch·PA SwitchPinoutSpecifications Parameter Symbol Limit Unit ...
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Parameter |
Symbol |
Limit |
Unit | ||
Drain-Source Voltage |
VDS |
-20 |
V | ||
Gate-Source Voltage |
VGS |
±8 |
V | ||
Continuous Drain Current, VGS @4.5V. |
ID |
-2.8 |
A | ||
Pulsed Drain Current, VGS @4.5V |
IDM |
-8 |
A | ||
Continuous Source Current (Diode Conduction)a,b |
IS |
-0.72 |
A | ||
Maximum Power Dissipation | Ta=25 |
PD |
0.9 |
W | |
Ta=75 |
0.57 | ||||
Operating Junction Temperature |
TJ |
+150 |
|||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
-50 to +150 |