TSM2301B

Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch·PA SwitchPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Dr...

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TSM2301B Picture
SeekIC No. : 004529638 Detail

TSM2301B: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· Load Switch·PA SwitchPinoutSpecifications Parameter Symbol Limit Unit ...

floor Price/Ceiling Price

Part Number:
TSM2301B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Advance Trench Process Technology
· High Density Cell Design for Ultra Low On-resistance



Application

· Load Switch
·PA Switch



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current, VGS @4.5V.
ID
-2.8
A
Pulsed Drain Current, VGS @4.5V
IDM
-8
A
Continuous Source Current (Diode Conduction)a,b
IS
-0.72
A
Maximum Power Dissipation Ta=25
PD
0.9
W
Ta=75
0.57
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
-50 to +150





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