Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20V V Gate-Source...
TSM2301: Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications ...
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Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
- 20V |
V | |
Gate-Source Voltage |
VGS |
± 8 |
V | |
Continuous Drain Current |
ID |
-2.3 |
A | |
Pulsed Drain Current |
IDM |
-10 |
A | |
Maximum Power Dissipation |
Ta = 25 |
PD |
1.25 |
W |
Ta = 75 |
0.8 | |||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |