TSM1N60L

Features: ·Robust high voltage termination·Avalanche energy specified·Diode is characterized for use in bridge circuits·Source to Drain diode recovery time comparable to a discrete fast recovery diode.·IDSS and VDS(on) specified at elevated temperatureSpecifications Characteristic Symbol...

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SeekIC No. : 004529633 Detail

TSM1N60L: Features: ·Robust high voltage termination·Avalanche energy specified·Diode is characterized for use in bridge circuits·Source to Drain diode recovery time comparable to a discrete fast recovery dio...

floor Price/Ceiling Price

Part Number:
TSM1N60L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Robust high voltage termination
· Avalanche energy specified
· Diode is characterized for use in bridge circuits
· Source to Drain diode recovery time comparable to a discrete fast recovery diode.
· IDSS and VDS(on) specified at elevated temperature



Specifications

Characteristic
Symbol
Rating
Unit
Drain - source voltage
VDSS
600V
V
Gate - source voltage
VGSS
±30
V
Continuous Drain Current
ID
1
A
Pulsed Drain Current
IDM
9
A
Maximum Power Dissipation
Ta = 25
PD
28
W
Ta > 25
0.22
/W
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Single Pulse Drain to Source Avalanche Energy
(VDD = 500V, VGS=10V, IAS=1A, L=115mH, RG=25Ω)
EAS
50
mJ



Description

The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, the TSM1N60L is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.




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