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TSM12N02

Features: Advanced trench process technologyLow gate chargeHigh Density Cell Design for Ultra Low On-ResistanceFully Characterized Avalanche Voltage and Current High performance technology for low RDS(ON)Fast switching speedSpecifications Parameter Symbol Limit Unit Drain-Source V...

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TSM12N02: Features: Advanced trench process technologyLow gate chargeHigh Density Cell Design for Ultra Low On-ResistanceFully Characterized Avalanche Voltage and Current High performance technology for low R...

TSM12N02 Data Sheet

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Part Number:
TSM12N02
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

Advanced trench process technology
Low gate charge
High Density Cell Design for Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
High performance technology for low RDS(ON)
Fast switching speed


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
12
A
Pulsed Drain Current
IDM
30
Maximum Power Dissipation TA = 25
PD
1.3
W
TA = 100
2
W/
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150



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