Features: Large die for high power capabilityVery low forward voltage dropBuilt-in stress relief mechanismfor die protectionSilver plated substrates for corrosion resistance and superior soldeabilitySoldering temperature: 250 C maximum oProtects expensive automotive electronics and mobile equipmen...
TSBD-3500D-1B: Features: Large die for high power capabilityVery low forward voltage dropBuilt-in stress relief mechanismfor die protectionSilver plated substrates for corrosion resistance and superior soldeabilit...
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Features: Large die for high power capabilityVery low forward voltage dropIncreased capacity by pa...
Features: Large die for high power capabilityVery low forward voltage dropIncreased capacity by pa...
Features: Very low forward voltage dropIncreased capacity by parallel operationProtects expensive ...
PARAMETER (TEST CONDITIONS | SYMBOL | RATINGS | UNITS |
MaximumRecurrent Peak Reverse Voltage | VRRM | 23 | VOLTS |
Working Peak Reverse Voltage | VRRM | ||
MaximumDC Blocking Voltage | VDC | ||
Breakdown Voltage (IR = 100 mA dc, Tc = 25 C) | V(BR) | 24 Min / 32 Max | |
Average Forward Rectified Current | IO | 35 | AMPS |
Non-repetitive Peak Forward Surge Current (Half wave, single phase, 60 Hz sine applied to rated load) |
IFSM | 600 | |
Repetitive Peak Reverse Surge Current (Time Constant = 10 mSec Duty Cycle < 1.0%, Tc = 25 C |
IRSM | 110 | |
Instantaneous Forward Voltage (IF = 100A@300mSec pulse,TC = 25oC) |
VF | 1.05 1.00 |
VOLTS |
MaximumDC Reverse Current (VR = 20V DC, Tc = 25 C) | IR | 200 | nA |
MaximumThermal Resistance, Junction to Case (Note 1) | RqJC |
0.8 | °C/W |
Junction Operating & Storage Temperature Range | TJ,TSTG | -65 to +175 | °C |