Features: ·Low VCE (SAT).·Excellent DC current gain characteristicsSpecifications Parameter Symbol Limit Unit Collector-Base Voltage VCBO - 30V V Collector-Emitter Voltage VCEO - 20V V Emitter-Base Voltage VEBO -6 V Collector Current DC IC -5 A Pulse - 10 C...
TSB1386: Features: ·Low VCE (SAT).·Excellent DC current gain characteristicsSpecifications Parameter Symbol Limit Unit Collector-Base Voltage VCBO - 30V V Collector-Emitter Voltage VCEO - ...
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Parameter | Symbol | Limit | Unit | |
Collector-Base Voltage | VCBO | - 30V | V | |
Collector-Emitter Voltage | VCEO | - 20V | V | |
Emitter-Base Voltage | VEBO | -6 | V | |
Collector Current | DC | IC | -5 | A |
Pulse | - 10 | |||
Collector Power Dissipation | TO-252 | PD | 1 | W |
SOT-89 | 0.5 | |||
Operating Junction Temperature | TJ | +150 | ||
Operating Junction and Storage Temperature Range | TSTG | - 55 to +150 |