TSB1132 Selling Leads, Price trend, TSB1132 DataSheet download, circuit diagram from SeekIC.com

Features: ·Low VCE (SAT).·Excellent DC current gain characteristicsSpecifications Parameter Symbol Limit Unit Collector-Base Voltage VCBO - 40V V Collector-Emitter Voltage VCEO - 32V V Emitter-Base Voltage VEBO -5 V Collector Current IC -1 A DC Pulse - 2.5 ...

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SeekIC No. : 004529102 Detail

TSB1132: Features: ·Low VCE (SAT).·Excellent DC current gain characteristicsSpecifications Parameter Symbol Limit Unit Collector-Base Voltage VCBO - 40V V Collector-Emitter Voltage VCEO - ...

TSB1132 Data Sheet

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Part Number:: TSB1132
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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US $.05 - .05 / Piece

Transistors Bipolar (BJT) PNP Transistor

Product Details

Description

Features:

·Low VCE (SAT).
·Excellent DC current gain characteristics

Specifications

Parameter		Symbol	Limit	Unit
Collector-Base Voltage		V_CBO	- 40V	V
Collector-Emitter Voltage		V_CEO	- 32V	V
Emitter-Base Voltage		V_EBO	-5	V
Collector Current		I_C	-1	A
	DC
	Pulse		- 2.5 (note 1)
Collector Power Dissipation	SOT-89	P_D	0.6	W
			2 (note 2)
Operating Junction Temperature		T_J	+150
Operating Junction and Storage Temperature Range		T_STG	- 55 to +150

Note:
1. Single pulse, Pw = 10mS, Duty <= 50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board

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TSB1132

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