DescriptionThe TS13003ACTB0 is a kind of high voltage NPN transistor, BVCEO = 400V, BVCBO = 800V, Ic = 1.5A, VCE (SAT), = 0.8V @ Ic/Ib = 0.5A/0.1A. If you want to know more about this IC, please go to our website. The features and the structure of TS13003ACTB0 can be summarized as (1)high voltage...
TS13003ACTB0: DescriptionThe TS13003ACTB0 is a kind of high voltage NPN transistor, BVCEO = 400V, BVCBO = 800V, Ic = 1.5A, VCE (SAT), = 0.8V @ Ic/Ib = 0.5A/0.1A. If you want to know more about this IC, please go ...
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The TS13003ACTB0 is a kind of high voltage NPN transistor, BVCEO = 400V, BVCBO = 800V, Ic = 1.5A, VCE (SAT), = 0.8V @ Ic/Ib = 0.5A/0.1A. If you want to know more about this IC, please go to our website.
The features and the structure of TS13003ACTB0 can be summarized as (1)high voltage; (2)high speed switching; (3)silicon triple diffused type; (4)NPN silicon transistor.
The absolute maximum ratings of TS13003ACTB0 are (1)collector-base voltage VCBO: 800V; (2)collector-emitter voltage VCEO: 430V; (3)emitter-base voltage VEBO: 9V; (4)collector current IC DC/Pulse: 4.5/3A; (5)collector power dissipation PD: 0.6 W; (6)operating junction temperature TJ: +150°C; (7)operating junction and storage temperature range TSTG: - 55 to +150°C.