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TS13002ACTB0

DescriptionThe TS13002ACTB0 is a kind of high voltage NPN transistor, BV CEO = 400V, BVCBO = 700V, Ic = 0.3A, VCE (SAT), = 1.5V @ Ic/Ib = 200mA/20mA. If you want to know more about this IC, please go to our website. The features and the structure of TS13002ACTB0 can be summarized as (1)high volta...

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TS13002ACTB0: DescriptionThe TS13002ACTB0 is a kind of high voltage NPN transistor, BV CEO = 400V, BVCBO = 700V, Ic = 0.3A, VCE (SAT), = 1.5V @ Ic/Ib = 200mA/20mA. If you want to know more about this IC, please g...

TS13002ACTB0 Data Sheet

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Part Number:
TS13002ACTB0
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Description

The TS13002ACTB0 is a kind of high voltage NPN transistor, BV CEO = 400V, BVCBO = 700V, Ic = 0.3A, VCE (SAT), = 1.5V @ Ic/Ib = 200mA/20mA. If you want to know more about this IC, please go to our website.

The features and the structure of TS13002ACTB0 can be summarized as (1)high voltage; (2)high speed switching; (3)silicon triple diffused type; (4)NPN silicon transistor.

The absolute maximum ratings of TS13002ACTB0 are (1)collector-base voltage VCBO: 700V; (2)collector-emitter voltage VCEO: 400V; (3)emitter-base voltage VEBO: 9V; (4)collector current IC DC/Pulse: 0.3/0.5A; (5)collector power dissipation PD: 0.6 W; (6)operating junction temperature TJ: +150°C; (7)operating junction and storage temperature range TSTG: - 55 to +150°C.




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