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TRF7003

Features: ` Wide Operating Frequency Range up to 1000 MHz` High Output Power: Typical Value of 32 dBm at 4.8 V and 900 MHz Typical Value of 29 dBm at 3.6 V and 900 MHz` High Gain: Typical Value of 9 dB at 4.8 V and 900 MHz at 32-dBm Output Power` High Power-Added Efficiency (PAE): Typical Valu...

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SeekIC No. : 004528109 Detail

TRF7003: Features: ` Wide Operating Frequency Range up to 1000 MHz` High Output Power: Typical Value of 32 dBm at 4.8 V and 900 MHz Typical Value of 29 dBm at 3.6 V and 900 MHz` High Gain: Typical Value o...

TRF7003 Data Sheet

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Part Number:
TRF7003
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

` Wide Operating Frequency Range up to 1000 MHz
` High Output Power:
      Typical Value of 32 dBm at 4.8 V and 900 MHz
      Typical Value of 29 dBm at 3.6 V and 900 MHz
` High Gain:
      Typical Value of 9 dB at 4.8 V and  900 MHz at 32-dBm Output Power
` High Power-Added Efficiency (PAE):
      Typical Value of 50% at 32-dBm Output Power
` Low Cost
` Extremely Rugged:
      Sustains 20:1 Load Mismatch
` Suitable for Various Wireless Applications
` Low Leakage Current <1 A
` SOT-89 Plastic Power Package
` 1000 V Human Body Model ESD Protection on Gate and Drain


Specifications

Drain-source voltage, VDS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Gate-source voltage, VGS   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous drain current, ID   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Junction temperature, TJmax  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
Thermal resistance, junction to case, RJC (See Note 1)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Total device power dissipation at TC = 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.5 W 
    Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW/°C
Operating free-air temperature range,TA  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C  to  85°C
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 100°C
ESD protection, gate and drain, human body model  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1000 V


Description

The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).




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