Features: • Ultra Compact Size 6.0x6.0x1.1mm3.• High System Efficiency GSM850 40%,GSM900 45% , DCS/PCS 38%• Integrated Power and SP6T Control• Integrated SP6T pHEMT Switch• Free choice of Rx ports for band selection• Integrated Low Pass Tx Harmonics FilterR...
TQM6M4001: Features: • Ultra Compact Size 6.0x6.0x1.1mm3.• High System Efficiency GSM850 40%,GSM900 45% , DCS/PCS 38%• Integrated Power and SP6T Control• Integrated SP6T pHEMT Switch&...
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Symbol | Parameter | Conditions | Absolute Maximum Value | Units |
VBatt | Positive Supply Voltage | -0.5 to 5.5 | V | |
Vmod_en | Module enable | -0.5 to 3.0 | V | |
VTX | Tx enable | -0.5 to 3.0 | V | |
VBS1 | Band select 1 | -0.5 to 3.0 | V | |
VBS2 | Band select 2 | -0.5 to 3.0 | V | |
Vramp | Power Control Voltage | -0.5 to 3.0 | V | |
IBatt | DC Supply Current | 2.5 max | A | |
PA Duty Cycle at Maximum Power | 50 max [pulse time 2.3ms] |
% | ||
TJ | Junction Temperature | 150 max | ||
TSTORAGE | Storage Temperature | -55 to +150 | ||
TC | Operating Case (ambient) Temperature | -30 to +100 | ||
Pin | Maximum input power | RF input power applied |
10 | dBm |
ESD ruggedness at Antenna port |
IEC 61000 4 2 (330 , 150 pF |
80001) | V | |
ESD ruggedness at Rx ports |
HBM (1500 , 100 pF) |
250 | V | |
ESD ruggedness at all other ports |
HBM (1500 , 100 pF) |
1000 | V |
Note: The transmit module will survive over the full range of specified maximum ratings for any individual parameter, while all other parameters are nominal and no RF input signal is applied (unless otherwise stated).
1) Requires external inductor. Without external inductor, the ESD ruggedness at the antenna port is 4 kV according to IEC 61000-4-2. Please refer to the application note for further application details.
The advanced quad-band Transmit Module TQM6M4001 designed for mobile handset applications provides full RF transmit functionality in a size of only 36 mm2.
The GSM850/900 and DCS/PCS power amplifier blocks of TQM6M4001 including power control are combined with the low insertion loss quad-band pHEMT switch, Tx harmonics filtering, integrated switch decoder, four receive ports, and full ESD protection. This architecture eliminates the need for any PA-to-switch design effort for phone designers. All four Rx ports are frequency independent and allow flexible routing to the transceiver. Fabricated in high-reliability InGaP HBT / pHEMT technology, the module TQM6M4001 supports GPRS class 12 operation and provides 50 Ohms input and output impedances at all RF input and output ports. The module control inputs are CMOS compatible and has no need for an external reference voltage. With its excellent efficiency performance in all 4 bands, the power amplifier and switch module TQM6M4001 contributes to the overall talktime targets of next generation mobile handset designs.