TQHBT3

TriQuint's new TQHBT3 process is a highly reliable InGaP HBT process with three levels of interconnecting metal and state-of-the-art device performance. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and InGaP Emitter are utilized for high RF performance consistent with high reliability. Designs utilizing the 3-um emitter width of TQHBT3 have the performance of previous 2-um emitters, but with the reliability and ruggedness associated with wider emitters. Precision NiCr resistors and high value MIM capacitors are included. The three metal layers of TQHBT3 are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity.