TQHBT

Features: • InGaP Emitter Process for High Reliability and Thermal Stability• Base Etch Stop for Uniformity• MOCVD Epitaxy• High Linearity in PA applications• High Density Interconnects;• 2 Global, 1 Local• Over 6 m Total Thickness• Dielectric Encaps...

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SeekIC No. : 004527895 Detail

TQHBT: Features: • InGaP Emitter Process for High Reliability and Thermal Stability• Base Etch Stop for Uniformity• MOCVD Epitaxy• High Linearity in PA applications• High Dens...

floor Price/Ceiling Price

Part Number:
TQHBT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/11

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Product Details

Description



Features:

• InGaP Emitter Process for High
   Reliability and Thermal Stability
• Base Etch Stop for Uniformity
• MOCVD Epitaxy
• High Linearity in PA applications
• High Density Interconnects;
• 2 Global, 1 Local
• Over 6 m Total Thickness
• Dielectric Encapsulated Metals
• Thick Metal Interconnects:
• Enhanced Thermal Management
• Minimum Die Size
• Effective Base Ballasting for
   Maximum Gain
• 150 mm Wafers
• High-Q Passives
• NiCr Thin Film Resistors
• High Value Capacitors
• Backside Vias Optional
• Validated Models and Design Support



Application

• Power Amplifiers
• Driver Amplifiers
• Wideband, General Purpose Amplifiers
• Gilbert Cell Mixers
• VCOs
• Single Supply and Easy Biasing



Specifications

HBT Storage Temperature Range -65 to +150 Deg C
HBT Operating Junction Temperature
Range
-55 to +150 Deg C
Junction Current Denstity 20 kA/cm^2
Capacitor 10 V



Description

TriQuint's TQHBT process is a highly reliable InGaP HBT process with three levels of interconnecting metal. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and InGaP Emitter are utilized for high RF performance consistent with high reliability. Precision NiCr resistors and high value MIM capacitors of TQHBT are included. The three metal layers of TQHBT are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity.




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