Features: • InGaP Emitter Process for High Reliability and Thermal Stability• Base Etch Stop for Uniformity• MOCVD Epitaxy• High Linearity in PA applications• High Density Interconnects;• 2 Global, 1 Local• Over 6 m Total Thickness• Dielectric Encaps...
TQHBT: Features: • InGaP Emitter Process for High Reliability and Thermal Stability• Base Etch Stop for Uniformity• MOCVD Epitaxy• High Linearity in PA applications• High Dens...
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HBT Storage Temperature Range | -65 to +150 | Deg C |
HBT Operating Junction Temperature Range |
-55 to +150 | Deg C |
Junction Current Denstity | 20 | kA/cm^2 |
Capacitor | 10 | V |
TriQuint's TQHBT process is a highly reliable InGaP HBT process with three levels of interconnecting metal. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and InGaP Emitter are utilized for high RF performance consistent with high reliability. Precision NiCr resistors and high value MIM capacitors of TQHBT are included. The three metal layers of TQHBT are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity.