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TPR 400

SpecificationsMaximum Power Dissipation @250C2 875 Watts Maximum Voltage and CurrentBVces Collector to Base Voltage55 VoltsBVeboEmitter to Base Voltage4.0 VoltsIc Collector Current 80 Amps 30 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200 0COperating Junction Temperature + 2000CDescript...

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TPR 400: SpecificationsMaximum Power Dissipation @250C2 875 Watts Maximum Voltage and CurrentBVces Collector to Base Voltage55 VoltsBVeboEmitter to Base Voltage4.0 VoltsIc Collector Current 80 Amps 30 AmpsMa...

TPR 400 Data Sheet

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Part Number:
TPR 400
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Specifications

Maximum Power Dissipation @250C2                 875 Watts
Maximum Voltage and Current
BVces          Collector to Base Voltage                    55 Volts
BVebo          Emitter to Base Voltage                   4.0  Volts
Ic Collector Current 80 Amps                                30 Amps
Maximum Temperatures
Storage Temperature                                - 65 to + 200 0C
Operating Junction Temperature                           + 2000C 


Description

The TPR 400 is a high power COMMON BASE bipolar transistor. TPR 400 is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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