SpecificationsMaximum Power Dissipation @250C22900 Watts Maximum Voltage and CurrentBVces Collector to Base Voltage65 VoltsBVeboEmitter to Base Voltage 3.5 VoltsIc Collector Current 80 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200 0COperating Junction Temperature + 2000CDescriptionThe ...
TPR 1000: SpecificationsMaximum Power Dissipation @250C22900 Watts Maximum Voltage and CurrentBVces Collector to Base Voltage65 VoltsBVeboEmitter to Base Voltage 3.5 VoltsIc Collector Current 80 AmpsMaximum T...
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The TPR 1000 is a high power COMMON BASE bipolar transistor. TPR 1000 is designed for pulsed systems in the frequency band 1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input returns for fast rise time. Low thermal resistance package reduces junction temperature, extends life.