TPD7202F

The TPD7202F is a power MOSFET Gate driver for H-bridge circuit using charge pump system. Because this IC contains a charge pump circuit for high-side drive, it allows you to configure H-bridge circuit.

Features of the TPD7202F are:(1)power MOSFET gate driver for H-bridge circuit; (2)built-in power MOSFET protection and diagnosis functions:overvoltage and low-voltage protection; (3)built-in a charge pump circuit; (4)package:SSOP-24 (300 mil) with embossed-tape packing.Current can be taken out of the charge pump's final stage (CPV pin) to external devices without causing any problem. In this case, because the charge pump voltage drops,increase the capacitance of the capacitor connected to the CPV pin. However, this may cause the charging current to the capacitor and, hence, loss in the IC to increase. So be careful not to exceed the allowable loss.

The absolute maximum ratings of the TPD7202F can be summarized as:(1)power supply voltage:-0.5 to 30 V;(2)output current:1A;(3)storage temperature:-40 to 150;(4)power dissipation:1.5W;(5)operating temperature:-40 to 125.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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