DescriptionThe TPD7200F is a type of MOS gate driver for half bridge circuit, utilized the level shift system, manufactured by the high voltage tolerant SOI process. A boots-system power supply is used for the high-side driver. Features of TPD7200F are:(1)MOS gate driver for half-bridge circuit; ...
TPD7200F: DescriptionThe TPD7200F is a type of MOS gate driver for half bridge circuit, utilized the level shift system, manufactured by the high voltage tolerant SOI process. A boots-system power supply is u...
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The TPD7200F is a type of MOS gate driver for half bridge circuit, utilized the level shift system, manufactured by the high voltage tolerant SOI process. A boots-system power supply is used for the high-side driver.
Features of TPD7200F are:(1)MOS gate driver for half-bridge circuit; (2)high voltage up to 600V; (3)provides a large drive capacity; source current of up to 0.25A and sink current of up to 0.5A; (4)uses a bootstrap-system power sup ply for the high side driver; (5)built in a power supply under-voltage lockout with hysteresis; (6)comes in a 20-pin ssop source mount package.
The absolute maximum ratings of the TPD7200F can be summarized as:(1)high side floating power supply voltage:-0.5V to Vss+20V; (2)high side floating power supply dv/dt tolerance: 20kV/us; (3)high side output voltage: VSS-0.5V to VBS+0.5V; (4)low side power supply voltage:-0.5V to 20V; (5)low side output voltage:-0.5V to Vcc+0.5V; (6)logic circuit power supply voltage:-0.5V to 20V; (7)logical input voltage:-0.5V to VDD+0.5V; (8)power dissipation: 0.4W; (9)junction temperature: 150, etc.